PART |
Description |
Maker |
MIC2296BML MIC2296BD5 MIC2296YD5 |
High Power Density 1.2A Boost Regulator
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Micrel Semiconductor
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FX5545G0066V0T2E2 FX5545G006 FX5545G0062V7B1 FX554 |
Industry Smallest and Low Profile 9W 1.5A DC/DC Boost Converter with High Output Power Density
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VISAY[Vishay Siliconix]
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ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp. Semtech Corporation
|
SMB10J6.0 SMB10J6.0A SMB10J6.5 SMB10J6.5A SMB8J8.0 |
High Power Density Surface Mount TRANSZORB㈢ Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB垄莽 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB庐 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
|
Vishay Siliconix http://
|
ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) 3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度,大电3 -相全波桥式整流器(反向电000V的温5℃时平均整流电流45A条,高密度,大电流,三相全波桥整流器 HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp. Semtech Corporation
|
306DCR2R3STV |
High Capacitance ?Very fast charge/discharge ?High power density
|
Illinois Capacitor, Inc...
|
WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter 5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER 5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
SD20-XXX |
High Power Density
|
Cooper Electronic
|
1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
RT9278 RT9278GQV RT9278PQV |
High Efficiency Boost LDO Converter & High Power White LED Driver
|
Richtek Technology Corporation
|
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